Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator
Identifieur interne : 001689 ( Chine/Analysis ); précédent : 001688; suivant : 001690Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator
Auteurs : RBID : Pascal:06-0294838Descripteurs français
- Pascal (Inist)
- Courant injection, Guide onde optique, Atténuateur optique, Guide onde courbe, Etude théorique, Méthode optimisation, Méthode propagation faisceau, Simulation numérique, Algorithme génétique, Indice réfraction, Composé quaternaire, Gallium arséniure, Indium arséniure, Indium phosphure, Gallium phosphure, Composé binaire, Semiconducteur III-V, InGaAsP, As Ga In P, In P, InP, 4279G.
English descriptors
- KwdEn :
- Beam propagation method, Bent waveguide, Binary compound, Gallium arsenides, Gallium phosphide, Genetic algorithm, III-V semiconductors, Indium arsenides, Indium phosphide, Injection current, Numerical simulation, Optical attenuator, Optical waveguide, Optimization method, Quaternary compound, Refraction index, Theoretical study.
Abstract
An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.
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Pascal:06-0294838Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator</title>
<author><name>YONGZHUO ZOU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Optical and Electromagnetic Research, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University</s1>
<s2>Hungzhou 310027</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hungzhou 310027</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="He, Jian Jun" uniqKey="He J">Jian-Jun He</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Lightip Technologies, Inc</s1>
<s2>Ottawa, ON KIK 4R8</s2>
<s3>CAN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Canada</country>
<wicri:noRegion>Ottawa, ON KIK 4R8</wicri:noRegion>
</affiliation>
</author>
<author><name>SAILING HE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Optical and Electromagnetic Research, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University</s1>
<s2>Hungzhou 310027</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Hungzhou 310027</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Division of Electromagnetic Theory, Alfven Laboratory, Royal Institute of Technology</s1>
<s2>100 44 Stockholm</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>100 44 Stockholm</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0294838</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0294838 INIST</idno>
<idno type="RBID">Pascal:06-0294838</idno>
<idno type="wicri:Area/Main/Corpus">008D86</idno>
<idno type="wicri:Area/Main/Repository">009088</idno>
<idno type="wicri:Area/Chine/Extraction">001689</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0030-4018</idno>
<title level="j" type="abbreviated">Opt. commun.</title>
<title level="j" type="main">Optics communications</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beam propagation method</term>
<term>Bent waveguide</term>
<term>Binary compound</term>
<term>Gallium arsenides</term>
<term>Gallium phosphide</term>
<term>Genetic algorithm</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Injection current</term>
<term>Numerical simulation</term>
<term>Optical attenuator</term>
<term>Optical waveguide</term>
<term>Optimization method</term>
<term>Quaternary compound</term>
<term>Refraction index</term>
<term>Theoretical study</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant injection</term>
<term>Guide onde optique</term>
<term>Atténuateur optique</term>
<term>Guide onde courbe</term>
<term>Etude théorique</term>
<term>Méthode optimisation</term>
<term>Méthode propagation faisceau</term>
<term>Simulation numérique</term>
<term>Algorithme génétique</term>
<term>Indice réfraction</term>
<term>Composé quaternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Indium phosphure</term>
<term>Gallium phosphure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
<term>In P</term>
<term>InP</term>
<term>4279G</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0030-4018</s0>
</fA01>
<fA02 i1="01"><s0>OPCOB8</s0>
</fA02>
<fA03 i2="1"><s0>Opt. commun.</s0>
</fA03>
<fA05><s2>262</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YONGZHUO ZOU</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HE (Jian-Jun)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SAILING HE</s1>
</fA11>
<fA14 i1="01"><s1>Centre for Optical and Electromagnetic Research, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University</s1>
<s2>Hungzhou 310027</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Lightip Technologies, Inc</s1>
<s2>Ottawa, ON KIK 4R8</s2>
<s3>CAN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Division of Electromagnetic Theory, Alfven Laboratory, Royal Institute of Technology</s1>
<s2>100 44 Stockholm</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>188-192</s1>
</fA20>
<fA21><s1>2006</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14750</s2>
<s5>354000115468360090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0294838</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optics communications</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03G02C1</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Courant injection</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Injection current</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Corriente inyección</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Guide onde optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Optical waveguide</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Guía onda óptica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Atténuateur optique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Optical attenuator</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Atenuador óptico</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Guide onde courbe</s0>
<s5>13</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Bent waveguide</s0>
<s5>13</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Guía onda curva</s0>
<s5>13</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Etude théorique</s0>
<s5>21</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Theoretical study</s0>
<s5>21</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Estudio teórico</s0>
<s5>21</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Méthode optimisation</s0>
<s5>23</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Optimization method</s0>
<s5>23</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Método optimización</s0>
<s5>23</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Méthode propagation faisceau</s0>
<s5>24</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Beam propagation method</s0>
<s5>24</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Método propagación haz</s0>
<s5>24</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Simulation numérique</s0>
<s5>25</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Numerical simulation</s0>
<s5>25</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Simulación numérica</s0>
<s5>25</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Algorithme génétique</s0>
<s5>26</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Genetic algorithm</s0>
<s5>26</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Algoritmo genético</s0>
<s5>26</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Indice réfraction</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Refraction index</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Indice refracción</s0>
<s5>41</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Composé quaternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Quaternary compound</s0>
<s5>50</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Compuesto cuaternario</s0>
<s5>50</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s5>53</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>53</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Gallium phosphure</s0>
<s5>54</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Gallium phosphide</s0>
<s5>54</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>55</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>55</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>55</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>4279G</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>191</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
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